Scientific activity

Scientist in the field of integrated circuit technology based on complex semiconductors; photoelectronics, probe microscopy; innovation activities in the scientific and technical field.

Specialist in the field of physics and technology of heterostructures, element base, micro- and nanoelectronics, microsystem technology devices, author and co-author of more than 200 scientific papers, including 5 monographs and 50 copyright certificates.

The main scientific results:

- the characteristics of photosensitive layers of a solid solution of gallium arsenide doped with manganese were studied and designs and technologies for their epitaxial growth were developed; the technology of multi-element IR photodetectors in the spectral range 8-12 μm with an increased operating temperature and pre-processing of the signal of low-noise amplifiers based on gallium arsenide was developed and introduced into production;

- the problem of developing effective autoemission media for devices of power microwave electronics and integrated emission electronics of the subterahertz frequency range was solved using the developed technology for manufacturing the structure silicon/diamond/silicon-carbon tunnel-transparent conductive layer with arrays of micropoints at the silicon/diamond heterointerface;

- technologies for manufacturing complex (with elements and optical proximity) binary and phase-shifting photomasks of the 130 nm level was developed;

- design principles and technologies for thermal MEMS sensors were developed, their manufacturing on wafers with a diameter of 150 mm was launched.

V.A. Bespalov organized and manages the Center for Collective Usage of MIET for the manufacturing microsystem equipment and devices based on complex semiconductors.