Scientist from the UK held a scientific seminar for representatives of the Nano- and microsystem Technology Institute of MIET

Scientist from the UK held a scientific seminar for representatives of the Nano- and microsystem Technology Institute of MIET

On March 19, the Nano- and Microsystem Technology Institute of MIET hosted a scientific seminar with the chief scientist of the University of Warwick (the UK) Maxim Mironov. The moderator of the meeting was MIET postgraduate Sergey Fedotov who met with a scientist from the UK at the 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) in Coventry last year. To listen to the report on the topic "Possibilities of Epitaxial Growth of Silicon Compounds" came the employees of the NMST Institute, post-graduate students and undergraduates.

During the speech Maxim Mironov talked about his more than 15-year experience in obtaining thin films of Group IV (Si, Ge, C, Si1-xGex, Si1-xCx, Ge1-xSnx, Ge1-x-ySnxSiy, 3C-SiC, 4H -SiC, 6H-SiC, etc.) and III-V semiconductors (InSb, GaAs, GaN, etc.). With particular interest he studies the epitaxy of thin films of semiconductors and low-dimensional structures to create new epitaxial materials in electronic, photonic, thermoelectric, spintronic, photovoltaic devices and sensors. Employees of the NMST Institute also shared their research results on new technological modes of gas phase heteroepitaxy, which made it possible to obtain thin layers of silicon on sapphire, superior to similar layers due to improved structural and electrophysical characteristics. New protected development allowed to optimize the technology of SOS manufacturing with a thickness of 300 and 600 nm.

Maxim Mironov was asked about his experience of international cooperation, publications in high-ranking journals, legal relations in the field of intellectual activity and other. At the end of the event, the director of the NMST Institute, Professor Sergey P. Timoshenkov, expressed his gratitude to his English counterpart, both sides noted the benefits of scientific cooperation between the universities and the relevance of the topic of heteroepitaxial structures for MEMS/NEMS used in various industries.

Head of International Relations Division
Mrs. Irina I. Ponomaryova
+7 (499) 734-02-64 ird@miee.ru
Vice-Rector for International Affairs
Dr. Alexander G. Balashov
+7 (499) 720-89-33 ait@miee.ru